A silicon sample is doped such that the number of holes far exceeds the number of electrons. Which of the following is true about its conductivity?

When a silicon sample is doped in such a way that the number of holes far exceeds the number of electrons, it implies the use of trivalent impurity atoms (like Boron), which create acceptor levels near the valence band. These acceptor impurities capture electrons from the valence band, creating a large number of holes . Since holes are much greater in number compared to electrons, they act as the majority charge carriers , while electrons become the minority carriers. In such p-type semiconductors , electrical conductivity is governed primarily by the drift of holes under an applied electric field. Though minority electrons do contribute to conduction, their role is minimal in comparison.